Samsung M4 70T5663QZ3-CF7 2GB vs G Skill Intl F4-3200C14-8GTZSW 8GB

总分

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

总分

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 15.6

测试中的平均数值

G Skill Intl F4-3200C14-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 64

左右 -100% 更低的延时
更快的写入速度，GB/s

13.2 1,869.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CF7 2GB

G Skill Intl F4-3200C14-8GTZSW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 32
读取速度，GB/s

4,477.7 15.6
写入速度，GB/s

1,869.1 13.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

697 3000

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-8GTZSW 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Crucial Technology BLE8G4D30AEEA.K16FE 8GB

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Corsair CM4X8GE2400C14K4 8GB

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Kingston 9905584-016.A00LF 4GB

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Kingston ACR26D4U9S1KA-4 4GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Kingston ACR26D4U9D8MH-16 16GB

Kingston ACR26D4U9D8MH-16 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3000C15-8GRBB 8GB

G Skill Intl F4-3000C15-8GRBB 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB