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Samsung M4 70T5663QZ3-CF7 2GB
G Skill Intl F4-4400C19-32GTRS 32GB

Samsung M4 70T5663QZ3-CF7 2GB vs G Skill Intl F4-4400C19-32GTRS 32GB

总分
star star star star star
Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

总分
star star star star star
G Skill Intl F4-4400C19-32GTRS 32GB

G Skill Intl F4-4400C19-32GTRS 32GB

差异 规格 评论

差异

Samsung M4 70T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M4 70T5663QZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.7
    测试中的平均数值
G Skill Intl F4-4400C19-32GTRS 32GB 需要考虑的原因
G Skill Intl F4-4400C19-32GTRS 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 64
    左右 -137% 更低的延时
  • 更快的写入速度，GB/s
    17.2 left arrow 1,869.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663QZ3-CF7 2GB
G Skill Intl F4-4400C19-32GTRS 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 27
  • 读取速度，GB/s
    4,477.7 left arrow 17.7
  • 写入速度，GB/s
    1,869.1 left arrow 17.2
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    697 left arrow 3837

Samsung M4 70T5663QZ3-CF7 2GB RAM的比较

Samsung M4 70T5663RZ3-CF7 2GB
SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-4400C19-32GTRS 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Kingston 9905702-019.A00G 8GB
Kingston 9905702-019.A00G 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
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Samsung M378A2K43CB1-CTD 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Kingston XF875V-MIH 8GB
Kingston XF875V-MIH 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA82GS6AFR8N-UH 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
内存RAM
Samsung M378A2K43DB1-CVF 16GB
Samsung M378A2K43DB1-CVF 16GB
Samsung M378A2K43CB1-CTD 16GB
Samsung M378A2K43CB1-CTD 16GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Corsair CM4X16GC3600C18K2D 16GB
Corsair CM4X16GC3600C18K2D 16GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
G Skill Intl F4-2400C17-8GISM 8GB
G Skill Intl F4-2400C17-8GISM 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMD32GX4M4B3200C16 8GB
Corsair CMD32GX4M4B3200C16 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Corsair CMR32GX4M4C3333C16 8GB
内存RAM
Crucial Technology CT102464BF160B.16F 8GB
Crucial Technology CT102464BF160B.16F 8GB
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Panram International Corporation PUD43000C158G2NJK 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
内存RAM