Samsung M471A1G44AB0-CWE 8GB vs Corsair CMT32GX4M4Z3200C16 8GB

总分

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分

Corsair CMT32GX4M4Z3200C16 8GB

Corsair CMT32GX4M4Z3200C16 8GB

差异规格评论

差异

Samsung M471A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB

报告一个错误

更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Corsair CMT32GX4M4Z3200C16 8GB

需要考虑的原因
Corsair CMT32GX4M4Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 50

左右 -85% 更低的延时
更快的读取速度，GB/s

18.5 15.3

测试中的平均数值
更快的写入速度，GB/s

16.0 10.9

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A1G44AB0-CWE 8GB

Corsair CMT32GX4M4Z3200C16 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

50 27
读取速度，GB/s

15.3 18.5
写入速度，GB/s

10.9 16.0
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2512 3873

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR800D2N6/2G 2GB

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Corsair CMY8GX3M2A2133C8 4GB

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Panram International Corporation M424051 4GB

Panram International Corporation M424051 4GB

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SK Hynix HMA851S6DJR6N-XN 4GB

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Apacer Technology 78.01G86.9H50C 1GB

Kingston KDK8NX-MIE 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Kingston 9965433-034.A00LF 4GB

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Samsung M378A2K43BB1-CRC 16GB

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