Samsung M471A1G44AB0-CWE 8GB vs Crucial Technology BLS8G4S26BFSDK.8FD 8GB

总分

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

差异规格评论

差异

Samsung M471A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB

报告一个错误

更快的读取速度，GB/s

15.3 11.7

测试中的平均数值
更快的写入速度，GB/s

10.9 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSDK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 50

左右 -22% 更低的延时

规格

完整的技术规格清单

Samsung M471A1G44AB0-CWE 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

50 41
读取速度，GB/s

15.3 11.7
写入速度，GB/s

10.9 9.5
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2512 2058

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S1333C9 2GB

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Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

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SK Hynix HMA81GU6CJR8N-UH 8GB

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Kingston 99U5403-492.A00LF 8GB

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Corsair CMD8GX4M2B3600C18 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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Apacer Technology 78.BAGM6.40C0B 4GB