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Samsung M471A1G44AB0-CWE 8GB
Micron Technology TEAMGROUP-UD4-2133 16GB

Samsung M471A1G44AB0-CWE 8GB vs Micron Technology TEAMGROUP-UD4-2133 16GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Micron Technology TEAMGROUP-UD4-2133 16GB

Micron Technology TEAMGROUP-UD4-2133 16GB

差异 规格 评论

差异

Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Micron Technology TEAMGROUP-UD4-2133 16GB 需要考虑的原因
Micron Technology TEAMGROUP-UD4-2133 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 50
    左右 -108% 更低的延时

规格

完整的技术规格清单
Samsung M471A1G44AB0-CWE 8GB
Micron Technology TEAMGROUP-UD4-2133 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 24
  • 读取速度，GB/s
    15.3 left arrow 12.6
  • 写入速度，GB/s
    10.9 left arrow 5.6
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2512 left arrow 2130

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology TEAMGROUP-UD4-2133 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Micron Technology TEAMGROUP-UD4-2133 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMSO16GX4M2A2133C15 8GB
Corsair CMSO16GX4M2A2133C15 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMH16GX4M2Z3600C18 8GB
Corsair CMH16GX4M2Z3600C18 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMK16GX4M1A2666C16 16GB
Corsair CMK16GX4M1A2666C16 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M391A2K43BB1-CRC 16GB
Samsung M391A2K43BB1-CRC 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Corsair CMK8GX4M2A2400C14 4GB
Corsair CMK8GX4M2A2400C14 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-4000C19-4GTZ 4GB
G Skill Intl F4-4000C19-4GTZ 4GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
内存RAM
Kingston ASU16D3LS1KFG/4G 4GB
Kingston ASU16D3LS1KFG/4G 4GB
Kingston KHX2400C15S4/8G 8GB
Kingston KHX2400C15S4/8G 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905743-034.A00G 8GB
Kingston 9905743-034.A00G 8GB
内存RAM
Kingmax Semiconductor GLLG42F-18---------- 8GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
V-GEN D4S8GL32A8TS 8GB
V-GEN D4S8GL32A8TS 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
内存RAM