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Samsung M378B5773SB0-CK0 2GB
Corsair CMT32GX4M2Z3200C16 16GB

Samsung M378B5773SB0-CK0 2GB vs Corsair CMT32GX4M2Z3200C16 16GB

总分
star star star star star
Samsung M378B5773SB0-CK0 2GB

Samsung M378B5773SB0-CK0 2GB

总分
star star star star star
Corsair CMT32GX4M2Z3200C16 16GB

Corsair CMT32GX4M2Z3200C16 16GB

差异 规格 评论

差异

Samsung M378B5773SB0-CK0 2GB 需要考虑的原因
Samsung M378B5773SB0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
Corsair CMT32GX4M2Z3200C16 16GB 需要考虑的原因
Corsair CMT32GX4M2Z3200C16 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.9 left arrow 11
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773SB0-CK0 2GB
Corsair CMT32GX4M2Z3200C16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    11.0 left arrow 17.9
  • 写入速度，GB/s
    8.0 left arrow 15.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1581 left arrow 3733

Samsung M378B5773SB0-CK0 2GB RAM的比较

Nanya Technology NT4GC64B8HG0NF-DI 4GB
Kingston 9905703-009.A00G 16GB

Corsair CMT32GX4M2Z3200C16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kingston 9905702-150.A00G 8GB
Kingston 9905702-150.A00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
DSL Memory D4SS1G081SH24A-A 8GB
DSL Memory D4SS1G081SH24A-A 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMT32GX4M4C3200C14 8GB
Corsair CMT32GX4M4C3200C14 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMR64GX4M4A2666C16 16GB
Corsair CMR64GX4M4A2666C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C15-8GVK 8GB
G Skill Intl F4-3200C15-8GVK 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston KF3600C18D4/16GX 16GB
Kingston KF3600C18D4/16GX 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Smart Modular SF464128CK8I6GKSEG 4GB
Smart Modular SF464128CK8I6GKSEG 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMR16GX4M2Z3200C16 8GB
Corsair CMR16GX4M2Z3200C16 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kingston ACR32D4U2S8ME-16 16GB
Kingston ACR32D4U2S8ME-16 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
内存RAM