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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BLS16G4D32AESB.M16FE 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Crucial Technology BLS16G4D32AESB.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
18.5
测试中的平均数值
更快的写入速度,GB/s
2,622.0
15.2
测试中的平均数值
需要考虑的原因
Crucial Technology BLS16G4D32AESB.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
77
左右 -166% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
29
读取速度,GB/s
3,405.2
18.5
写入速度,GB/s
2,622.0
15.2
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
763
3784
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KHX3600C17D4/8GX 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CB16GS2666.C8ET 16GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M391A1G43DB0-CPB 8GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3000C16-16GSXFB 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-3400C16-16GVR 16GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Kingston 9905599-010.A00G 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905700-026.A00G 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3600C18-8GTZRX 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CMK32GX4M4A2400C16 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMR32GX4M4D3200C16 8GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
报告一个错误
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