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Samsung M471A1K43CB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Samsung M471A1K43CB1-CRC 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

总分
star star star star star
Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

差异 规格 评论

差异

Samsung M471A1K43CB1-CRC 8GB 需要考虑的原因
Samsung M471A1K43CB1-CRC 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.9 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 9.8
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 37
    左右 -37% 更低的延时

规格

完整的技术规格清单
Samsung M471A1K43CB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 27
  • 读取速度，GB/s
    13.9 left arrow 13.8
  • 写入速度，GB/s
    9.9 left arrow 9.8
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2389 left arrow 2323

Samsung M471A1K43CB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB RAM的比较

Apacer Technology 78.01G86.9H50C 1GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Panram International Corporation D4U2666P-8G 8GB
Panram International Corporation D4U2666P-8G 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3400C16-16GVK 16GB
G Skill Intl F4-3400C16-16GVK 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMSX16GX4M2A3200C22 8GB
Corsair CMSX16GX4M2A3200C22 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
内存RAM
Crucial Technology CT51264BF160BJ.M8F 4GB
Crucial Technology CT51264BF160BJ.M8F 4GB
Corsair CMW8GX4M1Z3200C16 8GB
Corsair CMW8GX4M1Z3200C16 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CMT64GX4M4C3200C16 16GB
Corsair CMT64GX4M4C3200C16 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KHX2666C13D4/4GX 4GB
Kingston KHX2666C13D4/4GX 4GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology DDR4 3000 2OZ 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
G Skill Intl F4-3600C15-8GTZ 8GB
G Skill Intl F4-3600C15-8GTZ 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
A-DATA Technology DDR4 3600 2OZ 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM