Samsung M471A1K43DB1-CTD 8GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

总分

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

总分

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

差异规格评论

差异

Samsung M471A1K43DB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB

报告一个错误

Chun Well Technology Holding Limited D4U0826190B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 35

左右 -21% 更低的延时
更快的读取速度，GB/s

16.7 15.7

测试中的平均数值
更快的写入速度，GB/s

12.9 11.8

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A1K43DB1-CTD 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

35 29
读取速度，GB/s

15.7 16.7
写入速度，GB/s

11.8 12.9
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2767 3273

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F5-5600J4040C16G 16GB

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Crucial Technology BLS8G4D30BESBK.8FD 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston KHX3600C18D4/16GX 16GB

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Micron Technology TEAMGROUP-UD4-2133 16GB

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