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Samsung M471A1K43DB1-CTD 8GB
Crucial Technology CT16G4DFS8266.C8FB 16GB

Samsung M471A1K43DB1-CTD 8GB vs Crucial Technology CT16G4DFS8266.C8FB 16GB

总分
star star star star star
Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

总分
star star star star star
Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

差异 规格 评论

差异

Samsung M471A1K43DB1-CTD 8GB 需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB
报告一个错误
Crucial Technology CT16G4DFS8266.C8FB 16GB 需要考虑的原因
Crucial Technology CT16G4DFS8266.C8FB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1K43DB1-CTD 8GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 28
  • 读取速度，GB/s
    15.7 left arrow 16.1
  • 写入速度，GB/s
    11.8 left arrow 12.6
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2767 left arrow 3344

Samsung M471A1K43DB1-CTD 8GB RAM的比较

Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB RAM的比较

PNY Electronics PNY 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
内存RAM
Team Group Inc. TEAMGROUP-UD3-2400 8GB
Team Group Inc. TEAMGROUP-UD3-2400 8GB
Corsair CMR32GX4M4D3000C16 8GB
Corsair CMR32GX4M4D3000C16 8GB
内存RAM
Kingston KF548C38-16 16GB
Kingston KF548C38-16 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMK32GX4M4K4266C19 8GB
Corsair CMK32GX4M4K4266C19 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Apacer Technology 78.C1GS7.DFW0C 8GB
Apacer Technology 78.C1GS7.DFW0C 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3466C16-16GTZSW 16GB
G Skill Intl F4-3466C16-16GTZSW 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
SK Hynix HMA851U6CJR6N-UH 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston XRMWRN-MIE 16GB
Kingston XRMWRN-MIE 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Transcend Information TS2GSH64V1B 16GB
Transcend Information TS2GSH64V1B 16GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Corsair CMY8GX3M2A2133C8 4GB
Corsair CMY8GX3M2A2133C8 4GB
SK Hynix HMA84GL7AMR4N-TF 32GB
SK Hynix HMA84GL7AMR4N-TF 32GB
内存RAM