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Samsung M391B5673EH1-CH9 2GB
Corsair CMR64GX4M8X3800C19 8GB
比较
Samsung M391B5673EH1-CH9 2GB vs Corsair CMR64GX4M8X3800C19 8GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
Corsair CMR64GX4M8X3800C19 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
51
左右 49% 更低的延时
需要考虑的原因
Corsair CMR64GX4M8X3800C19 8GB
报告一个错误
更快的写入速度,GB/s
13.5
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Corsair CMR64GX4M8X3800C19 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
51
读取速度,GB/s
12.8
12.8
写入速度,GB/s
9.0
13.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2143
3090
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Corsair CMR64GX4M8X3800C19 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-3600C18-8GVK 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMR64GX4M8X3800C19 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Samsung M393B1K70CH0-CH9 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Kingston K531R8-MIN 4GB
Kingston 9965662-002.A01G 16GB
Samsung M471A1K43EB1-CWE 8GB
PUSKILL PJ16TFK1GM8 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
SK Hynix HYMP112U64CP8-S5 1GB
Mushkin MRB4U300GJJM16G 16GB
Kingston 9905403-134.A00LF 2GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Kingston 9905584-016.A00LF 4GB
Kingston 9905701-022.A00G 16GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
报告一个错误
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Bug description
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