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Samsung M391B5673EH1-CH9 2GB
Corsair CMR64GX4M8X3800C19 8GB
比较
Samsung M391B5673EH1-CH9 2GB vs Corsair CMR64GX4M8X3800C19 8GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
Corsair CMR64GX4M8X3800C19 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
51
左右 49% 更低的延时
需要考虑的原因
Corsair CMR64GX4M8X3800C19 8GB
报告一个错误
更快的写入速度,GB/s
13.5
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Corsair CMR64GX4M8X3800C19 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
51
读取速度,GB/s
12.8
12.8
写入速度,GB/s
9.0
13.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2143
3090
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Corsair CMR64GX4M8X3800C19 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CML16GX3M2A1600C10 8GB
Corsair CMV16GX4M1A2400C16 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Neo Forza NMUD416E82-3600 16GB
PNY Electronics PNY 2GB
Corsair CMK64GX4M8X4000C19 8GB
Kingston 9905403-090.A01LF 4GB
Kingston 9905663-006.A00G 16GB
Kingston KVR16N11/8-SP 8GB
Corsair CMK128GX4M8X3800C19 16GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology BL4G24C16U4B.8FE 4GB
SpecTek Incorporated ?????????????????? 2GB
Kingston KHX3200C20S4/16GX 16GB
Samsung M391B5673EH1-CH9 2GB
Transcend Information JM2666HLG-16GK 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin 99[2/7/4]191[F/T] 4GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-2400C17-8GDBVR 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
Samsung M471A1G43EB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3333C16-8GVK 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
报告一个错误
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Bug description
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