RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB

Samsung M471A1K43DB1-CWE 8GB vs Crucial Technology CT16G4SFRA32A.C8FE 16GB

总分
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

总分
star star star star star
Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

差异 规格 评论

差异

Samsung M471A1K43DB1-CWE 8GB 需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 39
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 12.0
    测试中的平均数值
Crucial Technology CT16G4SFRA32A.C8FE 16GB 需要考虑的原因
Crucial Technology CT16G4SFRA32A.C8FE 16GB
报告一个错误

规格

完整的技术规格清单
Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 39
  • 读取速度，GB/s
    16.1 left arrow 15.7
  • 写入速度，GB/s
    13.0 left arrow 12.0
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2987 left arrow 2958

Samsung M471A1K43DB1-CWE 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB RAM的比较

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston HX432C15PB3/16G 16GB
Kingston HX432C15PB3/16G 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston X2YH1K-MIE 16GB
Kingston X2YH1K-MIE 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMW16GX4M2D3600C18 8GB
Corsair CMW16GX4M2D3600C18 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology M471A1K43BB1-CRC 8GB
Micron Technology M471A1K43BB1-CRC 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Avant Technology W642GU42J2320NH 16GB
Avant Technology W642GU42J2320NH 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston X3XCFP-HYA 8GB
Kingston X3XCFP-HYA 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905663-006.A00G 16GB
Kingston 9905663-006.A00G 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
INTENSO 4GB
INTENSO 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
SK Hynix HMA84GL7MMR4N-TF 32GB
SK Hynix HMA84GL7MMR4N-TF 32GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
内存RAM