Samsung M471A2K43CB1-CTD 16GB vs Kingston ACR32D4S2S8ME-16 16GB

总分

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

总分

Kingston ACR32D4S2S8ME-16 16GB

Kingston ACR32D4S2S8ME-16 16GB

差异规格评论

差异

Samsung M471A2K43CB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43CB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 49

左右 29% 更低的延时
更快的写入速度，GB/s

11.3 10.7

测试中的平均数值

Kingston ACR32D4S2S8ME-16 16GB

需要考虑的原因
Kingston ACR32D4S2S8ME-16 16GB

报告一个错误

更快的读取速度，GB/s

17.1 15.5

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2 更高的带宽

规格

完整的技术规格清单

Samsung M471A2K43CB1-CTD 16GB

Kingston ACR32D4S2S8ME-16 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

35 49
读取速度，GB/s

15.5 17.1
写入速度，GB/s

11.3 10.7
内存带宽，mbps

21300 25600

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2848 2668

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3200C14-8GTZN 8GB

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Corsair CMK32GX4M2Z3600C18 16GB

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Kingston KHX3600C17D4/16GX 16GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

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Kingston KTP9W1-MIE 16GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

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Crucial Technology BLE8G4D26AFEA.16FBD 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB