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Samsung M471A5244BB0-CRC 4GB
SK Hynix HMA851S6CJR6N-VK 4GB

Samsung M471A5244BB0-CRC 4GB vs SK Hynix HMA851S6CJR6N-VK 4GB

总分
star star star star star
Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

总分
star star star star star
SK Hynix HMA851S6CJR6N-VK 4GB

SK Hynix HMA851S6CJR6N-VK 4GB

差异 规格 评论

差异

Samsung M471A5244BB0-CRC 4GB 需要考虑的原因
Samsung M471A5244BB0-CRC 4GB
报告一个错误
SK Hynix HMA851S6CJR6N-VK 4GB 需要考虑的原因
SK Hynix HMA851S6CJR6N-VK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 38
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 10.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Samsung M471A5244BB0-CRC 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 37
  • 读取速度，GB/s
    14.0 left arrow 15.4
  • 写入速度，GB/s
    10.4 left arrow 11.6
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2055 left arrow 2321

Samsung M471A5244BB0-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA851S6CJR6N-VK 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471A5244BB0-CRC 4GB
Samsung M471A5244BB0-CRC 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3600C14-8GTZRA 8GB
G Skill Intl F4-3600C14-8GTZRA 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
Nanya Technology NT8GC64B8HB0NS-DI 8GB
Nanya Technology NT8GC64B8HB0NS-DI 8GB
Hewlett-Packard 48U45AA# 16GB
Hewlett-Packard 48U45AA# 16GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
Team Group Inc. TEAMGROUP-UD4-2133 8GB
Team Group Inc. TEAMGROUP-UD4-2133 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Samsung M378A2K43BB1-CPB 16GB
Samsung M378A2K43BB1-CPB 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston KH2400C15D4/8 8GB
Kingston KH2400C15D4/8 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Corsair CMT32GX4M4C3466C16 8GB
Corsair CMT32GX4M4C3466C16 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology BL8G26C16U4B.8FE 8GB
Crucial Technology BL8G26C16U4B.8FE 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CM4X4GF3000C15K4 4GB
Corsair CM4X4GF3000C15K4 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CMK64GX4M2D3000C16 32GB
Corsair CMK64GX4M2D3000C16 32GB
内存RAM