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Samsung M471A5244CB0-CWE 4GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

Samsung M471A5244CB0-CWE 4GB vs A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 58
    左右 34% 更低的延时
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB 需要考虑的原因
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 15.5
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 58
  • 读取速度，GB/s
    15.5 left arrow 16.0
  • 写入速度，GB/s
    12.0 left arrow 12.0
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 2504

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CM4B16G1L3200K18K2 16GB
Corsair CM4B16G1L3200K18K2 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
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Kingston 9965589-008.D01G 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Corsair CMG64GX4M2D3600C18 32GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
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Corsair CMW128GX4M8C3200C16 16GB
内存RAM
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Kingston 9965525-018.A00LF 4GB
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内存RAM
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Kingston 9905743-045.A00G 16GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
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Crucial Technology CB8GS2400.C8ET 8GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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G Skill Intl F4-2133C15-8GSQ 8GB
内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
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Corsair CMK16GX4M2K3600C19 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
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Corsair CMW16GX4M2D3600C16 8GB
Corsair CMW16GX4M2D3600C16 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
内存RAM