Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-2400C15-8GRB 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

G Skill Intl F4-2400C15-8GRB 8GB

G Skill Intl F4-2400C15-8GRB 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更快的读取速度，GB/s

15.5 14.5

测试中的平均数值
更快的写入速度，GB/s

12.0 11.6

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-2400C15-8GRB 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GRB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 38

左右 -6% 更低的延时

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-2400C15-8GRB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 36
读取速度，GB/s

15.5 14.5
写入速度，GB/s

12.0 11.6
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2283 3001

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

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Corsair CMD16GX4M4A2800C16 4GB

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Samsung M378B5773DH0-CH9 2GB

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Kingston 9905471-071.A00LF 8GB

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Samsung M378B5273CH0-CH9 4GB

SpecTek Incorporated 16G2666CL19 16GB

SpecTek Incorporated 16G2666CL19 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

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Kingston CBD26D4S9S8ME-8 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9965589-006.E00G 8GB

Kingston 9965589-006.E00G 8GB