RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C18-16GTZR 16GB
比较
Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-3600C18-16GTZR 16GB
总分
Samsung M471A5244CB0-CWE 4GB
总分
G Skill Intl F4-3600C18-16GTZR 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C18-16GTZR 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
38
左右 -31% 更低的延时
更快的读取速度,GB/s
18.5
15.5
测试中的平均数值
更快的写入速度,GB/s
15.6
12.0
测试中的平均数值
规格
完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C18-16GTZR 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
29
读取速度,GB/s
15.5
18.5
写入速度,GB/s
12.0
15.6
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2283
3722
Samsung M471A5244CB0-CWE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C18-16GTZR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C18-16GTZR 16GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CB16GS2400.C16J 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Kingston 99U5734-036.A00G 16GB
A-DATA Technology AX5U5200C3816G-B 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
A-DATA Technology ADOVE1A0834E 1GB
Transcend Information AQD-D4U4GN21-SG 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Essencore Limited KD48GS481-26N1600 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
报告一个错误
×
Bug description
Source link