Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Samsung M378A1K43EB2-CVF 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

总分

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

报告一个错误

Samsung M378A1K43EB2-CVF 8GB

需要考虑的原因
Samsung M378A1K43EB2-CVF 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 -21% 更低的延时
更快的读取速度，GB/s

17.4 8.6

测试中的平均数值
更快的写入速度，GB/s

14.5 5.8

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Samsung M378A1K43EB2-CVF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 28
读取速度，GB/s

8.6 17.4
写入速度，GB/s

5.8 14.5
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

1682 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.B1GN3.AZ32B 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3000C15-4GRBB 4GB

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Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

Apacer Technology 78.C1GMM.BAC0B 8GB

Apacer Technology 78.C1GMM.BAC0B 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Teikon TMA851S6AFR6N-UHHC 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

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Crucial Technology CT32G4DFD8266.C16FE 32GB

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Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB