Samsung M471A5244CB0-CWE 4GB vs Gloway International (HK) STK2133C15-8GB 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Gloway International (HK) STK2133C15-8GB 8GB

Gloway International (HK) STK2133C15-8GB 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更快的读取速度，GB/s

15.5 13.3

测试中的平均数值
更快的写入速度，GB/s

12.0 6.3

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Gloway International (HK) STK2133C15-8GB 8GB

需要考虑的原因
Gloway International (HK) STK2133C15-8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 38

左右 -52% 更低的延时

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Gloway International (HK) STK2133C15-8GB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 25
读取速度，GB/s

15.5 13.3
写入速度，GB/s

12.0 6.3
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2283 1617

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Corsair CMV16GX4M1A2666C18 16GB

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Samsung M393B1G70QH0-YK0 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Micron Technology 4ATF1G64HZ-3G2E1 8GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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G Skill Intl F4-3200C16-4GVRB 4GB

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Kingston 9905471-076.A00LF 8GB

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Kingston KKN2NM-MIE 4GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CT16G4SFD8266.C16FN 16GB

Samsung M393B1K70CH0-YH9 8GB

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Kingston KHX2933C15D4/8GX 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Golden Empire CL16-20-20 D4-3200 16GB