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Samsung M471A5244CB0-CWE 4GB
Kingston KHYXPX-MID 8GB

Samsung M471A5244CB0-CWE 4GB vs Kingston KHYXPX-MID 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Kingston KHYXPX-MID 8GB

Kingston KHYXPX-MID 8GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Kingston KHYXPX-MID 8GB 需要考虑的原因
Kingston KHYXPX-MID 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 38
    左右 -9% 更低的延时

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Kingston KHYXPX-MID 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 35
  • 读取速度，GB/s
    15.5 left arrow 13.9
  • 写入速度，GB/s
    12.0 left arrow 8.9
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 2127

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KHYXPX-MID 8GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston KHYXPX-MID 8GB
Kingston KHYXPX-MID 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Panram International Corporation W4N2666PS-16G 16GB
Panram International Corporation W4N2666PS-16G 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Hewlett-Packard 7EH64AA#ABC 8GB
Hewlett-Packard 7EH64AA#ABC 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C14-8GTZRX 8GB
G Skill Intl F4-3200C14-8GTZRX 8GB
内存RAM
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMD16GX4M4B3000C15 4GB
Corsair CMD16GX4M4B3000C15 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Essencore Limited KD48GU880-36A180Z 8GB
Essencore Limited KD48GU880-36A180Z 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905663-008.A00G 16GB
Kingston 9905663-008.A00G 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C16-16GTZSW 16GB
G Skill Intl F4-3200C16-16GTZSW 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Mushkin 99[2/7/4]208F 8GB
Mushkin 99[2/7/4]208F 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
内存RAM