Samsung M471A5244CB0-CWE 4GB vs Maxsun MSD416G26Q3 16GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 84

左右 55% 更低的延时
更快的读取速度，GB/s

15.5 12.5

测试中的平均数值
更快的写入速度，GB/s

12.0 7.0

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Maxsun MSD416G26Q3 16GB

需要考虑的原因
Maxsun MSD416G26Q3 16GB

报告一个错误

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Maxsun MSD416G26Q3 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 84
读取速度，GB/s

15.5 12.5
写入速度，GB/s

12.0 7.0
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2283 1486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Team Group Inc. Team-Value-800 2GB

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Kingston HP26D4U6S8ME-8X 8GB

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V-GEN D4H4GL26A8TS5 4GB

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G Skill Intl F4-3300C16-4GRKD 4GB

Samsung M3 78T6553EZS-CF7 512MB

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Samsung M471A2K43CB1-CRCR 16GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology BLS4G4D240FSB.8FBD2 4GB

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Kingston 99U5474-013.A00LF 2GB

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Corsair CMK16GX4M4A2400C14 4GB

Corsair CMD8GX3M2A2933C12 4GB

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Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Corsair CMK8GX4M1A2400C14 8GB

Corsair CMK8GX4M1A2400C14 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB