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Samsung M471A5244CB0-CWE 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB

Samsung M471A5244CB0-CWE 4GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 15
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Micron Technology 16ATF2G64AZ-2G6E1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6E1 16GB
报告一个错误
  • 更快的写入速度，GB/s
    12.5 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 38
  • 读取速度，GB/s
    15.5 left arrow 15.0
  • 写入速度，GB/s
    12.0 left arrow 12.5
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 3005

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB RAM的比较

PNY Electronics PNY 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 9905403-090.A01LF 4GB
Kingston 9965662-012.A01G 16GB
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G Skill Intl F4-3600C19-8GSXF 8GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-16GVR 16GB
G Skill Intl F4-3200C16-16GVR 16GB
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Team Group Inc. Team-Elite-1333 4GB
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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
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Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
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内存RAM
Samsung M471A5244CB0-CWE 4GB
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Kingston 9965525-155.A00LF 8GB
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Corsair CMK32GX4M4Z3200C16 8GB
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内存RAM
Kingston 99U5471-020.A00LF 4GB
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Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
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Corsair CMW16GX4M1D3000C16 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
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Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
内存RAM
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Crucial Technology RM51264BA1339.16FR 4GB
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Asgard VMA45UG-MEC1U2BQ2 8GB
内存RAM
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Corsair CMR16GX4M2F4000C19 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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G Skill Intl F4-4000C18-8GTZKK 8GB
内存RAM