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Samsung M471A5244CB0-CWE 4GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Samsung M471A5244CB0-CWE 4GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 45
    左右 16% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 1900
    左右 13.47% 更高的带宽
Micron Technology 18ASF1G72PZ-2G3B1 8GB 需要考虑的原因
Micron Technology 18ASF1G72PZ-2G3B1 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 45
  • 读取速度，GB/s
    15.5 left arrow 11.7
  • 写入速度，GB/s
    12.0 left arrow 8.4
  • 内存带宽，mbps
    25600 left arrow 1900
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow no data
  • 排名PassMark (越多越好)
    2283 left arrow 2387

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB RAM的比较

Smart Modular SH564128FH8NZQNSCG 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Avant Technology J642GU42J5213N2 16GB
Avant Technology J642GU42J5213N2 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston HP26D4U6S8ME-8X 8GB
Kingston HP26D4U6S8ME-8X 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
SK Hynix HMA82GU6JJR8N-VK 16GB
SK Hynix HMA82GU6JJR8N-VK 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9905622-025.A01G 4GB
Kingston 9905622-025.A01G 4GB
内存RAM
Patriot Memory (PDP Systems) 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) 1600 CL10 Series 8GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
内存RAM
Nanya Technology M2X4G64CB88CHN-DG 4GB
Nanya Technology M2X4G64CB88CHN-DG 4GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3000C14-16GVK 16GB
G Skill Intl F4-3000C14-16GVK 16GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Crucial Technology BL16G32C16S4B.16FE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X32GE2666C18S2 32GB
Corsair CM4X32GE2666C18S2 32GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905630-039.A00G 16GB
Kingston 9905630-039.A00G 16GB
内存RAM