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Samsung M471A5244CB0-CWE 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
比较
Samsung M471A5244CB0-CWE 4GB vs Patriot Memory (PDP Systems) 3600 C14 Series 8GB
总分
Samsung M471A5244CB0-CWE 4GB
总分
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
19
38
左右 -100% 更低的延时
更快的读取速度,GB/s
16.6
15.5
测试中的平均数值
更快的写入速度,GB/s
14.7
12.0
测试中的平均数值
规格
完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
19
读取速度,GB/s
15.5
16.6
写入速度,GB/s
12.0
14.7
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2283
3626
Samsung M471A5244CB0-CWE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB RAM的比较
Crucial Technology BL16G32C16U4B.16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471A5244CB0-CWE 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
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Team Group Inc. Vulcan-1600 4GB
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Kingston 99U5663-006.A00G 16GB
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Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
SK Hynix HYMP112U64CP8-S6 1GB
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SK Hynix HMA41GS6AFR8N-TF 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
报告一个错误
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Bug description
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