Samsung M471A5244CB0-CWE 4GB vs Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 86

左右 56% 更低的延时
更快的读取速度，GB/s

15.5 14.3

测试中的平均数值
更快的写入速度，GB/s

12.0 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

需要考虑的原因
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

报告一个错误

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 86
读取速度，GB/s

15.5 14.3
写入速度，GB/s

12.0 8.1
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2283 1658

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Kingston 9905630-052.A00G 16GB

Kingston 9905630-052.A00G 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Kingston 9905624-008.A00G 8GB

Kingston 9905624-008.A00G 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Kingston ACR26D4S9S1KA-4 4GB

Kingston ACR26D4S9S1KA-4 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CMK64GX4M2E3200C16 32GB

Corsair CMK64GX4M2E3200C16 32GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Corsair CMK8GX4M2C3000C16 4GB

Corsair CMK8GX4M2C3000C16 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905665-023.A00G 4GB

Kingston 9905665-023.A00G 4GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

A-DATA Technology DDR4 3300 2OZ 4GB