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Samsung M471A5244CB0-CWE 4GB
SK Hynix HMA41GR7AFR4N-TF 8GB
比较
Samsung M471A5244CB0-CWE 4GB vs SK Hynix HMA41GR7AFR4N-TF 8GB
总分
Samsung M471A5244CB0-CWE 4GB
总分
SK Hynix HMA41GR7AFR4N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
低于PassMark测试中的延时,ns
38
52
左右 27% 更低的延时
更快的读取速度,GB/s
15.5
10.3
测试中的平均数值
更快的写入速度,GB/s
12.0
8.5
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
SK Hynix HMA41GR7AFR4N-TF 8GB
报告一个错误
规格
完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
SK Hynix HMA41GR7AFR4N-TF 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
52
读取速度,GB/s
15.5
10.3
写入速度,GB/s
12.0
8.5
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2283
2390
Samsung M471A5244CB0-CWE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA41GR7AFR4N-TF 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMK32GX5M2B5600C36 16GB
G Skill Intl F5-5600J4040C16G 16GB
Samsung M471A5244CB0-CWE 4GB
SK Hynix HMA41GR7AFR4N-TF 8GB
Kingston 99U5469-045.A00LF 4GB
Corsair CM4X8GE2400C15K4 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-8GSX 8GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Corsair CMSX32GX4M2A3200C22 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Kingston 9905471-002.A00LF 2GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
Kingston 9905403-061.A00LF 2GB
A-DATA Technology DDR4 3300 2OZ 4GB
Corsair CMZ16GX3M2A1866C9 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Samsung 1600 CL10 Series 8GB
Hewlett-Packard 48U45AA# 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK4GX4M1A2400C14 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMD32GX4M4B3866C18 8GB
报告一个错误
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Bug description
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