Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3200C16-8GSX 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C16-8GSX 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 55

左右 56% 更低的延时
更快的写入速度，GB/s

12.5 8.8

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3200C16-8GSX 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GSX 8GB

报告一个错误

更快的读取速度，GB/s

19.5 16

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3200C16-8GSX 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 55
读取速度，GB/s

16.0 19.5
写入速度，GB/s

12.5 8.8
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 2274

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMH16GX4M2Z3600C18 8GB

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SK Hynix DDR2 800 2G 2GB

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Corsair CM4B8G2J2666A15D 8GB

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Ramaxel Technology RMSA3270ME86H9F-2666 4GB

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SK Hynix HMA82GU7MFR8N-TF 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Avant Technology W6451U66J9266ND 4GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Apacer Technology 78.C1GS7.AUW0B 8GB