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Samsung M471A5244CB0-CWE 4GB
Tanbassh 8G 2666MHZ 8GB

Samsung M471A5244CB0-CWE 4GB vs Tanbassh 8G 2666MHZ 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 50
    左右 24% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Tanbassh 8G 2666MHZ 8GB 需要考虑的原因
Tanbassh 8G 2666MHZ 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Tanbassh 8G 2666MHZ 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 50
  • 读取速度，GB/s
    15.5 left arrow 10.2
  • 写入速度，GB/s
    12.0 left arrow 7.5
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 2064

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Tanbassh 8G 2666MHZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
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内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
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Samsung M471A2K43EB1-CTD 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
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Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
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Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM
Corsair CMW16GX4M2Z2933C16 8GB
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Corsair CMK16GX4M2Z2933C16 8GB
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内存RAM
Kingston 9905403-500.A01LF 8GB
Kingston 9905403-500.A01LF 8GB
SK Hynix GKE800UD102408-2400 8GB
SK Hynix GKE800UD102408-2400 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
内存RAM
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Samsung M471B5674QH0-YK0 2GB
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Kingston 9905678-041.A00G 4GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Kingston 9905700-017.A00G 8GB
Kingston 9905700-017.A00G 8GB
内存RAM
SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6DFR8A-PB 4GB
Kingston 99U5712-002.A00G 16GB
Kingston 99U5712-002.A00G 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
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Samsung M393A1K43BB0-CRC 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
内存RAM