RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
比较
Samsung M471A5244CB0-CWE 4GB vs V-Color Technology Inc. TL48G30S816KRGB 8GB
总分
Samsung M471A5244CB0-CWE 4GB
总分
V-Color Technology Inc. TL48G30S816KRGB 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
V-Color Technology Inc. TL48G30S816KRGB 8GB
报告一个错误
低于PassMark测试中的延时,ns
20
38
左右 -90% 更低的延时
更快的读取速度,GB/s
19.2
15.5
测试中的平均数值
更快的写入速度,GB/s
16.3
12.0
测试中的平均数值
规格
完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
20
读取速度,GB/s
15.5
19.2
写入速度,GB/s
12.0
16.3
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2283
3432
Samsung M471A5244CB0-CWE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
V-Color Technology Inc. TL48G30S816KRGB 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471A5244CB0-CWE 4GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
Samsung M471B5273DH0-CH9 4GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-2400C16-8GFT 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905624-036.A00G 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Hexon Technology Pte Ltd HEXON 1GB
Mushkin 99[2/7/4]183 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CMW32GX4M4A2666C16 8GB
Unifosa Corporation HU564404EP0200 4GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
A-DATA Technology DDR2 800G 2GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
Samsung M3 78T2863QZS-CF7 1GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Qimonda 72T128420EFA3SB2 1GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
G Skill Intl F4-2400C15-8GRR 8GB
Kingston 99U5403-465.A00LF 8GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
报告一个错误
×
Bug description
Source link