Samsung M471B1G73DB0-YK0 8GB vs Corsair CMR16GX4M2C 8GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

Corsair CMR16GX4M2C 8GB

Corsair CMR16GX4M2C 8GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

45 66

左右 32% 更低的延时
更快的读取速度，GB/s

11.9 11.4

测试中的平均数值
更快的写入速度，GB/s

8.1 7.2

测试中的平均数值

Corsair CMR16GX4M2C 8GB

需要考虑的原因
Corsair CMR16GX4M2C 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

Corsair CMR16GX4M2C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 66
读取速度，GB/s

11.9 11.4
写入速度，GB/s

8.1 7.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2077 1604

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMR16GX4M2C 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

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G Skill Intl F4-3000C16-16GTRG 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Golden Empire CL16-20-20 D4-3200 16GB

Golden Empire CL16-20-20 D4-3200 16GB