Samsung M471B1G73DB0-YK0 8GB vs Crucial Technology BL16G36C16U4W.M8FB1 16GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

Crucial Technology BL16G36C16U4W.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4W.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 45

左右 -73% 更低的延时
更快的读取速度，GB/s

19.4 11.9

测试中的平均数值
更快的写入速度，GB/s

15.3 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 26
读取速度，GB/s

11.9 19.4
写入速度，GB/s

8.1 15.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2077 3783

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Kingston 99U5643-001.A00G 8GB

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SpecTek Incorporated PSD34G13332 4GB

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Shenzhen Technology Co Ltd 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Crucial Technology CT4G4DFS8213.M8FA 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMK16GX4M2B3200C14 8GB

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Samsung M378B5673EH1-CF8 2GB

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A-DATA Technology DQVE1908 512MB

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Patriot Memory (PDP Systems) 3000 C15 Series 8GB

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Patriot Memory (PDP Systems) PSD22G6672 2GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

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Corsair CMT32GX4M4K3600C16 8GB

Corsair CMT32GX4M4K3600C16 8GB

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Kingston HX424C15PB/4 4GB