Samsung M471B1G73DB0-YK0 8GB vs EXCELERAM D48G8G8H8SS9CJRB22 8GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

EXCELERAM D48G8G8H8SS9CJRB22 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

45 65

左右 31% 更低的延时

EXCELERAM D48G8G8H8SS9CJRB22 8GB

需要考虑的原因
EXCELERAM D48G8G8H8SS9CJRB22 8GB

报告一个错误

更快的读取速度，GB/s

17 11.9

测试中的平均数值
更快的写入速度，GB/s

9.5 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 65
读取速度，GB/s

11.9 17.0
写入速度，GB/s

8.1 9.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2077 2058

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMK16GX4M4B3600C18 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Apacer Technology 78.BAGMD.AF20B 4GB

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Kingston KVR800D2S6/4G 4GB

Kingston KVR800D2S6/4G 4GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK64GX4M4A2133C13 16GB

Corsair CMK64GX4M4A2133C13 16GB