Samsung M471B1G73DB0-YK0 8GB vs Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 45

左右 -105% 更低的延时
更快的读取速度，GB/s

17.7 11.9

测试中的平均数值
更快的写入速度，GB/s

13.1 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 22
读取速度，GB/s

11.9 17.7
写入速度，GB/s

8.1 13.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2077 2666

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M4B4000C19 8GB

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Kingston ACR256X64D3S1333C9 2GB

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A-DATA Technology DDR4 3600 2OZ 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

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