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Samsung M471B1G73DM0-YK0 8GB
Crucial Technology CT102464BF160B.M16 8GB

Samsung M471B1G73DM0-YK0 8GB vs Crucial Technology CT102464BF160B.M16 8GB

总分
star star star star star
Samsung M471B1G73DM0-YK0 8GB

Samsung M471B1G73DM0-YK0 8GB

总分
star star star star star
Crucial Technology CT102464BF160B.M16 8GB

Crucial Technology CT102464BF160B.M16 8GB

差异 规格 评论

差异

Samsung M471B1G73DM0-YK0 8GB 需要考虑的原因
Samsung M471B1G73DM0-YK0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 45
    左右 33% 更低的延时
Crucial Technology CT102464BF160B.M16 8GB 需要考虑的原因
Crucial Technology CT102464BF160B.M16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    12.8 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 6.1
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471B1G73DM0-YK0 8GB
Crucial Technology CT102464BF160B.M16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    30 left arrow 45
  • 读取速度，GB/s
    10.4 left arrow 12.8
  • 写入速度，GB/s
    6.1 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1836 left arrow 2173

Samsung M471B1G73DM0-YK0 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT102464BF160B.M16 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B1G73DM0-YK0 8GB
Samsung M471B1G73DM0-YK0 8GB
Crucial Technology CT102464BF160B.M16 8GB
Crucial Technology CT102464BF160B.M16 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
AMD R7416G2400U2S 16GB
AMD R7416G2400U2S 16GB
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Micron Technology 4ATF51264AZ-3G2E1 4GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
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Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
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Team Group Inc. TEAMGROUP-UD4-3733 8GB
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Elpida EBJ40EG8BFWB-JS-F 4GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston 99U5700-027.A00G 8GB
Kingston 99U5700-027.A00G 8GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
SK Hynix GKE800SO102408-2400 8GB
SK Hynix GKE800SO102408-2400 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3200C16-16GTRG 16GB
G Skill Intl F4-3200C16-16GTRG 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
内存RAM