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Samsung M471B1G73QH0-YK0 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Samsung M471B1G73QH0-YK0 8GB vs ATP Electronics Inc. A4G08QA8BNPBSE 8GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.8 left arrow 11.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 6.1
    测试中的平均数值
ATP Electronics Inc. A4G08QA8BNPBSE 8GB 需要考虑的原因
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 47
    左右 -57% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 30
  • 读取速度，GB/s
    11.8 left arrow 11.1
  • 写入速度，GB/s
    8.0 left arrow 6.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 1254

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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SK Hynix HMA451R7MFR8N-TFTD 4GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Kingston CBD26D4U9S8ME-8 8GB
Kingston CBD26D4U9S8ME-8 8GB
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SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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Samsung M393B1G70BH0-CK0 8GB
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G Skill Intl F4-3200C14-32GTZR 32GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-3200C16-8GVSB 8GB
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Samsung M471B5773DH0-CH9 2GB
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Samsung M386B4G70DM0-CMA4 32GB
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内存RAM
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Kingston 99U5474-010.A00LF 2GB
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Corsair CMW64GX4M8C3000C15 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
内存RAM
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Kingston ACR512X64D3S13C9G 4GB
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Corsair CMR128GX4M8C3000C16 16GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
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Kingston ACR24D4S7D8MB-16 16GB
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