Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology BL16G32C16U4RL.M8FB1 16GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4RL.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 -68% 更低的延时
更快的读取速度，GB/s

19.9 11.8

测试中的平均数值
更快的写入速度，GB/s

15.1 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 28
读取速度，GB/s

11.8 19.9
写入速度，GB/s

8.0 15.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2061 3785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Corsair CMK64GX4M8X4000C19 8GB

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Corsair CMY8GX3M2A2133C8 4GB

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Ramsta Ramsta-2400Mhz-8G 8GB

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Corsair CMK192GX4M12P3200C16 16GB

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AMD AE34G1601U1 4GB

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Corsair CM4X8GE2400C14K4 8GB

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Avant Technology W642GU42J5213N8 16GB

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Corsair CML16GX3M2A1600C10 8GB

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Micron Technology 4ATF51264AZ-2G3B1 4GB

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Samsung M393B5170FH0-CH9 4GB

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Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2133C15-8GRS 8GB

G Skill Intl F4-2133C15-8GRS 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9905665-014.A00G 4GB

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