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Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB

Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology BLS16G4D26BFSB.16FBR 16GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
Crucial Technology BLS16G4D26BFSB.16FBR 16GB

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
Crucial Technology BLS16G4D26BFSB.16FBR 16GB 需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 47
    左右 -104% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 23
  • 读取速度，GB/s
    11.8 left arrow 17.5
  • 写入速度，GB/s
    8.0 left arrow 12.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 3087

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

Crucial Technology BLS16G4D26BFSB.16FBR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
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Elpida KHX1600C10D3/8GXF 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
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SK Hynix HMA81GU6JJR8N-VK 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Kingston KGTWW1-MIE 4GB
Kingston KGTWW1-MIE 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Kingston KHX2400C14S4/4G 4GB
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SpecTek Incorporated PSD34G13332 4GB
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Corsair CMK16GX4M2D2400C14 8GB
内存RAM
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Kingston 99U5474-038.A00LF 4GB
Kingston 9905630-063.A00G 16GB
Kingston 9905630-063.A00G 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
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A-DATA Technology DQVE1908 512MB
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内存RAM
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PNY Electronics 4GBH2X02E99927-16 4GB
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Crucial Technology BLT8G4D30AETA.K16FD 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Corsair CMK32GX4M4K4133C19 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
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Kingston KHX2666C16D4/32GX 32GB
内存RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Corsair CMK128GX4M4E3200C16 32GB
内存RAM
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Kingston 99U5471-012.A00LF 4GB
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G Skill Intl F4-4266C19-4GTZ 4GB
内存RAM