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Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
比较
Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology BLS16G4S26BFSD.16FBD 16GB
总分
Samsung M471B1G73QH0-YK0 8GB
总分
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
需要考虑的原因
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
报告一个错误
低于PassMark测试中的延时,ns
34
47
左右 -38% 更低的延时
更快的读取速度,GB/s
14.5
11.8
测试中的平均数值
更快的写入速度,GB/s
9.6
8.0
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
47
34
读取速度,GB/s
11.8
14.5
写入速度,GB/s
8.0
9.6
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2061
2576
Samsung M471B1G73QH0-YK0 8GB RAM的比较
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMK16GX4M2L3000C15 8GB
报告一个错误
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