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Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT16G4DFRA266.C8FE 16GB

Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology CT16G4DFRA266.C8FE 16GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
Crucial Technology CT16G4DFRA266.C8FE 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
Crucial Technology CT16G4DFRA266.C8FE 16GB 需要考虑的原因
Crucial Technology CT16G4DFRA266.C8FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 47
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 31
  • 读取速度，GB/s
    11.8 left arrow 16.3
  • 写入速度，GB/s
    8.0 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 3179

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

Crucial Technology CT16G4DFRA266.C8FE 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Gloway International (HK) STK2133C15-8GB 8GB
Gloway International (HK) STK2133C15-8GB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
G Skill Intl F4-4266C19-32GTZR 32GB
G Skill Intl F4-4266C19-32GTZR 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Samsung M393A5143DB0-CRC 4GB
Samsung M393A5143DB0-CRC 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905625-096.A00G 16GB
Kingston 9905625-096.A00G 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMR64GX4M8C3000C15 8GB
Corsair CMR64GX4M8C3000C15 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Essencore Limited IM48GU88N21-FFFHM 8GB
Essencore Limited IM48GU88N21-FFFHM 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMW8GX4M1Z3600C18 8GB
Corsair CMW8GX4M1Z3600C18 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
内存RAM