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Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT32G4DFD8266.M16FB 32GB

Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology CT32G4DFD8266.M16FB 32GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
Crucial Technology CT32G4DFD8266.M16FB 32GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
Crucial Technology CT32G4DFD8266.M16FB 32GB 需要考虑的原因
Crucial Technology CT32G4DFD8266.M16FB 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 47
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.9 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 33
  • 读取速度，GB/s
    11.8 left arrow 15.3
  • 写入速度，GB/s
    8.0 left arrow 12.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 3315

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

Crucial Technology CT32G4DFD8266.M16FB 32GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
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Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Golden Empire CL16-16-16 D4-3200 4GB
Golden Empire CL16-16-16 D4-3200 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston XN205T-HYD2 16GB
Kingston XN205T-HYD2 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Kingston KHX2133C13D4/4GX 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM
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Kingston KHX1600C9D3/8G 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
内存RAM
Crucial Technology CT8G4DFRA266.C4FE 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
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Crucial Technology CT8G4DFRA266.C8FJ 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
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Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
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Kingston 9905403-156.A00LF 2GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
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内存RAM
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SK Hynix HYMP112U64CP8-S5 1GB
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