Samsung M471B1G73QH0-YK0 8GB vs G Skill Intl F4-3000C16-16GTZN 16GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

G Skill Intl F4-3000C16-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GTZN 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 47

左右 -52% 更低的延时
更快的读取速度，GB/s

17.5 11.8

测试中的平均数值
更快的写入速度，GB/s

15.0 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-3000C16-16GTZN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 31
读取速度，GB/s

11.8 17.5
写入速度，GB/s

8.0 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2061 3861

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Apacer Technology 78.C1GMM.DFW0C 8GB

Apacer Technology 78.C1GMM.DFW0C 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO10240

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Corsair CMK16GX4M1Z3600C18 16GB

Corsair CMK16GX4M1Z3600C18 16GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

G Skill Intl F4-2400C16-8GRSB 8GB

G Skill Intl F4-2400C16-8GRSB 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F4-3466C16-4GVK 4GB

G Skill Intl F4-3466C16-4GVK 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Kingston 9905624-046.A00G 8GB

Kingston 9905624-046.A00G 8GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Corsair CMD8GX4M2B3600C18 4GB

Corsair CMD8GX4M2B3600C18 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Kingston 9932291-002.A00G 4GB

Kingston 9932291-002.A00G 4GB