Samsung M471B1G73QH0-YK0 8GB vs G Skill Intl F4-3200C16-8GTZSK 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

G Skill Intl F4-3200C16-8GTZSK 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZSK 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 47

左右 -47% 更低的延时
更快的读取速度，GB/s

17.4 11.8

测试中的平均数值
更快的写入速度，GB/s

14.4 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 32
读取速度，GB/s

11.8 17.4
写入速度，GB/s

8.0 14.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2061 3340

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-8GTZSK 8GB

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Apacer Technology 78.BAGN8.AZC0B 4GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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Smart Modular SF4641G8CK8IEHLSBG 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Crucial Technology BLS4G4D240FSE.8FBD2 4GB

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Elpida EBJ41UF8BDW0-GN-F 4GB

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Micron Technology M471A1K43CB1-CTD 8GB

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Kingston KTC1G-UDIMM 1GB

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Kingston HP37D4U1S8ME-16X 16GB

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Samsung M395T5160QZ4-CE66 2GB

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Crucial Technology CT4G4SFS824A.C8FF 4GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB