Samsung M471B1G73QH0-YK0 8GB vs G Skill Intl F4-3300C16-16GTZKW 16GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

G Skill Intl F4-3300C16-16GTZKW 16GB

需要考虑的原因
G Skill Intl F4-3300C16-16GTZKW 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 47

左右 -96% 更低的延时
更快的读取速度，GB/s

16.1 11.8

测试中的平均数值
更快的写入速度，GB/s

11.9 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-3300C16-16GTZKW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 24
读取速度，GB/s

11.8 16.1
写入速度，GB/s

8.0 11.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2061 3305

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BL16G26C16U4W.16FE 16GB

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Kingston 9905625-065.A00G 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Corsair CMV8GX4M1A2666C18 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-3200C16-16GFX 16GB

G Skill Intl F4-3200C16-16GFX 16GB

Samsung M393A1G40DB0-CPB 8GB

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SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

G Skill Intl F3-1866C8-8GTX 8GB

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Wilk Elektronik S.A. IRH3200D464L16/16G 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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SK Hynix GKE800UD102408-2133 8GB

SK Hynix GKE800UD102408-2133 8GB