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Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3600C16-32GTZN 32GB

Samsung M471B1G73QH0-YK0 8GB vs G Skill Intl F4-3600C16-32GTZN 32GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
G Skill Intl F4-3600C16-32GTZN 32GB

G Skill Intl F4-3600C16-32GTZN 32GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
G Skill Intl F4-3600C16-32GTZN 32GB 需要考虑的原因
G Skill Intl F4-3600C16-32GTZN 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 47
    左右 -57% 更低的延时
  • 更快的读取速度，GB/s
    18.6 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.6 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3600C16-32GTZN 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 30
  • 读取速度，GB/s
    11.8 left arrow 18.6
  • 写入速度，GB/s
    8.0 left arrow 15.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 3792

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

G Skill Intl F4-3600C16-32GTZN 32GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3600C16-32GTZN 32GB
G Skill Intl F4-3600C16-32GTZN 32GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9965600-018.A00G 16GB
Kingston 9965600-018.A00G 16GB
内存RAM
Corsair CMK16GX4M2K4266C16 8GB
Corsair CMK16GX4M2K4266C16 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Mushkin 99[2/7/4]199F 8GB
Mushkin 99[2/7/4]199F 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Essencore Limited IM44GU48N26-FFFHM 4GB
Essencore Limited IM44GU48N26-FFFHM 4GB
内存RAM
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Samsung M471A1K43CB1-CRCR 8GB
Samsung M471A1K43CB1-CRCR 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMR16GX4M2Z2933C16 8GB
Corsair CMR16GX4M2Z2933C16 8GB
内存RAM