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Samsung M471B1G73QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Samsung M471B1G73QH0-YK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 47
    左右 -81% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 26
  • 读取速度，GB/s
    11.8 left arrow 16.8
  • 写入速度，GB/s
    8.0 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 2880

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM的比较

Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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