Samsung M471B1G73QH0-YK0 8GB vs Kingston 99U5700-028.A00G 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Kingston 99U5700-028.A00G 8GB

Kingston 99U5700-028.A00G 8GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Kingston 99U5700-028.A00G 8GB

需要考虑的原因
Kingston 99U5700-028.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 47

左右 -42% 更低的延时
更快的读取速度，GB/s

14.7 11.8

测试中的平均数值
更快的写入速度，GB/s

11.7 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Kingston 99U5700-028.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 33
读取速度，GB/s

11.8 14.7
写入速度，GB/s

8.0 11.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2061 2732

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T5663RZ3-CE6 2GB

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Teikon TMA851S6AFR6N-UHHC 4GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Samsung M393B1K70CH0-CH9 8GB

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Corsair CMW128GX4M8C3200C16 16GB

Corsair CMW128GX4M8C3200C16 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Corsair CMT32GX4M2C3200C14 16GB

Corsair CMT32GX4M2C3200C14 16GB

Kingston 99U5471-020.A00LF 4GB

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G Skill Intl F4-4000C15-8GVK 8GB

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