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Samsung M471B1G73QH0-YK0 8GB
SK Hynix HMT451U6BFR8A-PB 4GB

Samsung M471B1G73QH0-YK0 8GB vs SK Hynix HMT451U6BFR8A-PB 4GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
SK Hynix HMT451U6BFR8A-PB 4GB

SK Hynix HMT451U6BFR8A-PB 4GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
SK Hynix HMT451U6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451U6BFR8A-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 47
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    14 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 8.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
SK Hynix HMT451U6BFR8A-PB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    47 left arrow 42
  • 读取速度，GB/s
    11.8 left arrow 14.0
  • 写入速度，GB/s
    8.0 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 2186

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

SK Hynix HMT451U6BFR8A-PB 4GB RAM的比较

Samsung M378A5244CB0-CRC 4GB
Panram International Corporation PUD43000C168G2NJR 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
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内存RAM
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内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
SK Hynix HMT451U6BFR8A-PB 4GB
SK Hynix HMT451U6BFR8A-PB 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Patriot Memory (PDP Systems) PSD416G32002 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
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内存RAM
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SK Hynix HMA81GU6DJR8N-XN 8GB
内存RAM
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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内存RAM
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内存RAM
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内存RAM
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A-DATA Technology VDQVE1B16 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM