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Samsung M471B5173BH0-CK0 4GB
G Skill Intl F4-4133C17-8GTZR 8GB

Samsung M471B5173BH0-CK0 4GB vs G Skill Intl F4-4133C17-8GTZR 8GB

总分
star star star star star
Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

总分
star star star star star
G Skill Intl F4-4133C17-8GTZR 8GB

G Skill Intl F4-4133C17-8GTZR 8GB

差异 规格 评论

差异

Samsung M471B5173BH0-CK0 4GB 需要考虑的原因
Samsung M471B5173BH0-CK0 4GB
报告一个错误
G Skill Intl F4-4133C17-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4133C17-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 42
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.2 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173BH0-CK0 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 25
  • 读取速度，GB/s
    12.0 left arrow 19.5
  • 写入速度，GB/s
    7.2 left arrow 16.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1933 left arrow 3890

Samsung M471B5173BH0-CK0 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Teikon TMA851S6AFR6N-UHHC 4GB

G Skill Intl F4-4133C17-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C16-8GVKBN 8GB
G Skill Intl F4-3200C16-8GVKBN 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Corsair CMK32GX4M4B3200C16 8GB
Corsair CMK32GX4M4B3200C16 8GB
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMU32GX4M2C3000C16 16GB
Corsair CMU32GX4M2C3000C16 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
SK Hynix HMA425S6AFR6N-UH 2GB
SK Hynix HMA425S6AFR6N-UH 2GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-3600C16-16GTRGC 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMD32GX4M4C3200C14C 8GB
Corsair CMD32GX4M4C3200C14C 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Ramsta Ramsta-2666MHz-4G 4GB
Ramsta Ramsta-2666MHz-4G 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-4800C19-8GTESC 8GB
G Skill Intl F4-4800C19-8GTESC 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BL16G32C16S4B.8FB 16GB
Crucial Technology BL16G32C16S4B.8FB 16GB
内存RAM