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Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB

Samsung M471B5173DB0-YK0 4GB vs Crucial Technology CT16G4SFD8213.C16FDD 16GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
Crucial Technology CT16G4SFD8213.C16FDD 16GB 需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FDD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 45
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 30
  • 读取速度，GB/s
    12.0 left arrow 15.1
  • 写入速度，GB/s
    7.8 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 2732

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung 1600 CL10 Series 8GB
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Avant Technology W641GU48J7240ND 8GB
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G Skill Intl F3-1866C8-8GTX 8GB
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内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
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Crucial Technology CT16G4SFD8266.M16FH 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Kingston 99U5471-012.A00LF 4GB
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V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Kingston 99U5663-003.A00G 16GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
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PNY Electronics PNY 2GB
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内存RAM
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INTENSO 5641162 8GB
内存RAM
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Crucial Technology CT25664AA800.M16FM 2GB
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Kingston 9905625-139.A00G 16GB
内存RAM
Corsair CM2X1024-6400C4 1GB
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Kingston 9905633-017.A00G 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
内存RAM