Samsung M471B5173DB0-YK0 4GB vs Gloway International (HK) STKD4GAM2400-F 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 83

左右 46% 更低的延时

Gloway International (HK) STKD4GAM2400-F 8GB

需要考虑的原因
Gloway International (HK) STKD4GAM2400-F 8GB

报告一个错误

更快的读取速度，GB/s

14.3 12

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Gloway International (HK) STKD4GAM2400-F 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 83
读取速度，GB/s

12.0 14.3
写入速度，GB/s

7.8 7.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1939 1752

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK64GX5M2B5200C40 32GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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G Skill Intl F4-3600C14-16GVKA 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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SK Hynix HMA81GR7MFR8N-UH 8GB

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A-DATA Technology DQKD1A08 1GB

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SK Hynix HMT325U6CFR8C-PB 2GB

Apacer Technology 78.DAGNN.4030B 16GB

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